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Vishay SIR632DP-T1-RE3
MOSFET N-CH 150V 29A PPAK SO-8
Manufacturer # :SIR632DP-T1-RE3
Manufacturer :Vishay
Dasenic # :SIR632DP-T1-RE3-DS
Datasheet :
SIR632DP-T1-RE3 Datasheet
SIR632DP-T1-RE3 DatasheetCustomer # :
Description : MOSFET N-CH 150V 29A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.1430 | $ 1.14 |
| 10+ | $ 0.9450 | $ 9.45 |
| 100+ | $ 0.7407 | $ 74.07 |
| 500+ | $ 0.6624 | $ 331.2 |
| 1000+ | $ 0.5400 | $ 540 |
In Stock: 6440
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.143
Total :$ 1.14
Delivery :
Payment :
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SIR632DP-T1-RE3 information
Vishay SIR632DP-T1-RE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):69.5W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):150 V
- Current - Continuous Drain ( Id) @ 25° C:29A (Tc)
- Rds On ( Max) @ Id, Vgs:34.5mOhm @ 10A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 7.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:740 pF @ 75 V
- Drive Voltage ( Max Rds On, Min Rds On):7.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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