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Vishay SIR606DP-T1-GE3
MOSFET N-CH 100V 37A PPAK SO-8
Manufacturer # :SIR606DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SIR606DP-T1-GE3-DS
Datasheet :
SIR606DP-T1-GE3 Datasheet
SIR606DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 100V 37A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.0530 | $ 1.05 |
| 10+ | $ 0.8928 | $ 8.93 |
| 100+ | $ 0.7353 | $ 73.53 |
| 500+ | $ 0.6516 | $ 325.8 |
| 1000+ | $ 0.5652 | $ 565.2 |
In Stock: 12845
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.053
Total :$ 1.05
Delivery :
Payment :
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SIR606DP-T1-GE3 information
Vishay SIR606DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):44.5W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:37A (Tc)
- Rds On ( Max) @ Id, Vgs:16.2mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:3.6V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:22 nC @ 6 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1360 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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