Images are for reference only.
1 : $0.1318
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Vishay SIR464DP-T1-GE3
MOSFET N-CH 30V 50A PPAK SO-8
Manufacturer # :SIR464DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SIR464DP-T1-GE3-DS
Datasheet :
SIR464DP-T1-GE3 Datasheet
SIR464DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 50A PPAK SO-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.1318 | $ 1.32 |
| 500+ | $ 0.1098 | $ 54.9 |
In Stock: 42162
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1318
Total :$ 0.13
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
SIR464DP-T1-GE3 information
Vishay SIR464DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):5.2W (Ta), 69W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:50A (Tc)
- Rds On ( Max) @ Id, Vgs:3.1mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:95 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3545 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
Related Products Recommended
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
