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Vishay SIJH800E-T1-GE3
N-CHANNEL 80-V (D-S) 175C MOSFET
Manufacturer # :SIJH800E-T1-GE3
Manufacturer :Vishay
Dasenic # :SIJH800E-T1-GE3-DS
Datasheet :
SIJH800E-T1-GE3 Datasheet
SIJH800E-T1-GE3 DatasheetCustomer # :
Description : N-CHANNEL 80-V (D-S) 175C MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.8450 | $ 1.85 |
| 10+ | $ 1.8450 | $ 18.45 |
| 25+ | $ 1.8450 | $ 46.13 |
| 50+ | $ 1.8450 | $ 92.25 |
| 100+ | $ 1.8450 | $ 184.5 |
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.845
Total :$ 1.84
Delivery :
Payment :
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SIJH800E-T1-GE3 information
Vishay SIJH800E-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 8 x 8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 8 x 8
- Power Dissipation ( Max):3.3W (Ta), 333W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):80 V
- Current - Continuous Drain ( Id) @ 25° C:29A (Ta), 299A (Tc)
- Rds On ( Max) @ Id, Vgs:1.55mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:210 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:10230 pF @ 40 V
- Drive Voltage ( Max Rds On, Min Rds On):7.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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