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Vishay SIJ150DP-T1-GE3
MOSFET N-CH 45V 30.9A/110A PPAK
Manufacturer # :SIJ150DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SIJ150DP-T1-GE3-DS
Datasheet :
SIJ150DP-T1-GE3 Datasheet
SIJ150DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 45V 30.9A/110A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.0890 | $ 1.09 |
| 10+ | $ 0.8892 | $ 8.89 |
| 100+ | $ 0.6921 | $ 69.21 |
| 500+ | $ 0.5868 | $ 293.4 |
| 1000+ | $ 0.4779 | $ 477.9 |
In Stock: 8366
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.089
Total :$ 1.09
Delivery :
Payment :
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SIJ150DP-T1-GE3 information
Vishay SIJ150DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8
- Power Dissipation ( Max):5.2W (Ta), 65.7W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):45 V
- Current - Continuous Drain ( Id) @ 25° C:30.9A (Ta), 110A (Tc)
- Rds On ( Max) @ Id, Vgs:2.83mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:70 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:4000 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+20V, -16V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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