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1 : $1.4760
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Vishay SIHU6N65E-GE3
MOSFET N-CH 650V 7A IPAK
Manufacturer # :SIHU6N65E-GE3
Manufacturer :Vishay
Dasenic # :SIHU6N65E-GE3-DS
Datasheet :
SIHU6N65E-GE3 Datasheet
SIHU6N65E-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 650V 7A IPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.4760 | $ 1.48 |
| 10+ | $ 1.2330 | $ 12.33 |
| 75+ | $ 0.9720 | $ 72.9 |
| 300+ | $ 0.8991 | $ 269.73 |
| 525+ | $ 0.8163 | $ 428.56 |
In Stock: 8103
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.476
Total :$ 1.48
Delivery :
Payment :
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SIHU6N65E-GE3 information
Vishay SIHU6N65E-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Long Leads, IPak, TO-251AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:IPAK (TO-251)
- Power Dissipation ( Max):78W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:7A (Tc)
- Rds On ( Max) @ Id, Vgs:600mOhm @ 3A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:48 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:820 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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