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Vishay SIHU3N50D-GE3
MOSFET N-CH 500V 3A TO251
Manufacturer # :SIHU3N50D-GE3
Manufacturer :Vishay
Dasenic # :SIHU3N50D-GE3-DS
Datasheet :
SIHU3N50D-GE3 Datasheet
SIHU3N50D-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 500V 3A TO251
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.5680 | $ 1.57 |
| 5+ | $ 1.2200 | $ 6.1 |
| 25+ | $ 1.1000 | $ 27.5 |
| 75+ | $ 0.9700 | $ 72.75 |
In Stock: 712
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.568
Total :$ 1.57
Delivery :
Payment :
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SIHU3N50D-GE3 information
Vishay SIHU3N50D-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-251AA
- Power Dissipation ( Max):69W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):500 V
- Current - Continuous Drain ( Id) @ 25° C:3A (Tc)
- Rds On ( Max) @ Id, Vgs:3.2Ohm @ 2.5A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:12 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:175 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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