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Vishay SIHP30N60AEL-GE3
MOSFET N-CH 600V 28A TO220AB
Manufacturer # :SIHP30N60AEL-GE3
Manufacturer :Vishay
Dasenic # :SIHP30N60AEL-GE3-DS
Datasheet :
SIHP30N60AEL-GE3 Datasheet
SIHP30N60AEL-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 600V 28A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 9.7800 | $ 97.8 |
| 1000+ | $ 6.5200 | $ 6520 |
In Stock: 1596
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 9.78
Total :$ 9.78
Delivery :
Payment :
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SIHP30N60AEL-GE3 information
Vishay SIHP30N60AEL-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):250W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:28A (Tc)
- Rds On ( Max) @ Id, Vgs:120mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:120 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2565 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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