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Vishay SIHP28N65E-GE3
MOSFET N-CH 650V 29A TO220AB
Manufacturer # :SIHP28N65E-GE3
Manufacturer :Vishay
Dasenic # :SIHP28N65E-GE3-DS
Datasheet :
SIHP28N65E-GE3 Datasheet
SIHP28N65E-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 650V 29A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 5.0580 | $ 5.06 |
| 10+ | $ 4.4640 | $ 44.64 |
| 25+ | $ 4.1490 | $ 103.73 |
| 50+ | $ 3.8070 | $ 190.35 |
| 100+ | $ 3.3840 | $ 338.4 |
In Stock: 3006
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.058
Total :$ 5.06
Delivery :
Payment :
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SIHP28N65E-GE3 information
Vishay SIHP28N65E-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):250W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:29A (Tc)
- Rds On ( Max) @ Id, Vgs:112mOhm @ 14A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:140 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3405 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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