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Vishay SIHP21N65EF-GE3
MOSFET N-CH 650V 21A TO220AB
Manufacturer # :SIHP21N65EF-GE3
Manufacturer :Vishay
Dasenic # :SIHP21N65EF-GE3-DS
Datasheet :
SIHP21N65EF-GE3 Datasheet
SIHP21N65EF-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 650V 21A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 8.6127 | $ 86.13 |
| 1000+ | $ 5.7418 | $ 5741.8 |
| 2000+ | $ 5.5577 | $ 11115.4 |
| 4000+ | $ 5.3735 | $ 21494 |
| 6000+ | $ 5.1559 | $ 30935.4 |
In Stock: 1518
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 8.6127
Total :$ 8.61
Delivery :
Payment :
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SIHP21N65EF-GE3 information
Vishay SIHP21N65EF-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):208W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:21A (Tc)
- Rds On ( Max) @ Id, Vgs:180mOhm @ 11A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:106 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2322 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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