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Vishay SIHP14N50D-GE3
MOSFET N-CH 500V 14A TO220AB
Manufacturer # :SIHP14N50D-GE3
Manufacturer :Vishay
Dasenic # :SIHP14N50D-GE3-DS
Datasheet :
SIHP14N50D-GE3 Datasheet
SIHP14N50D-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 500V 14A TO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 6.0800 | $ 6.08 |
| 10+ | $ 5.1400 | $ 51.4 |
| 25+ | $ 4.8200 | $ 120.5 |
| 50+ | $ 4.5000 | $ 225 |
| 100+ | $ 4.1800 | $ 418 |
In Stock: 1938
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 6.08
Total :$ 6.08
Delivery :
Payment :
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SIHP14N50D-GE3 information
Vishay SIHP14N50D-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):208W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):500 V
- Current - Continuous Drain ( Id) @ 25° C:14A (Tc)
- Rds On ( Max) @ Id, Vgs:400mOhm @ 7A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:58 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1144 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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