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Vishay SIHP080N60E-GE3
E SERIES POWER MOSFET TO-220AB,
Manufacturer # :SIHP080N60E-GE3
Manufacturer :Vishay
Dasenic # :SIHP080N60E-GE3-DS
Datasheet :
SIHP080N60E-GE3 Datasheet
SIHP080N60E-GE3 DatasheetCustomer # :
Description : E SERIES POWER MOSFET TO-220AB,
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.6730 | $ 2.67 |
| 50+ | $ 2.1188 | $ 105.94 |
| 100+ | $ 1.8162 | $ 181.62 |
| 500+ | $ 1.7764 | $ 888.2 |
In Stock: 8503
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.673
Total :$ 2.67
Delivery :
Payment :
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SIHP080N60E-GE3 information
Vishay SIHP080N60E-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220AB
- Power Dissipation ( Max):227W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:35A (Tc)
- Rds On ( Max) @ Id, Vgs:80mOhm @ 17A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:63 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2557 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:Vendor omitted MSL Rating information
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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