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Vishay SIHLZ34S-GE3
MOSFET N-CH 60V 30A D2PAK
Manufacturer # :SIHLZ34S-GE3
Manufacturer :Vishay
Dasenic # :SIHLZ34S-GE3-DS
Datasheet :
SIHLZ34S-GE3 Datasheet
SIHLZ34S-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 60V 30A D2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.1660 | $ 21.66 |
| 1000+ | $ 1.4440 | $ 1444 |
| 2000+ | $ 1.3977 | $ 2795.4 |
| 4000+ | $ 1.3514 | $ 5405.6 |
| 6000+ | $ 1.2967 | $ 7780.2 |
In Stock: 2598
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.166
Total :$ 2.17
Delivery :
Payment :
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SIHLZ34S-GE3 information
Vishay SIHLZ34S-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK (TO-263)
- Power Dissipation ( Max):3.7W (Ta), 88W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:50mOhm @ 18A, 5V
- Vgs(th) ( Max) @ Id:2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:35 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1600 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 5V
- Vgs ( Max):±10V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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