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Vishay SIHK055N60E-T1-GE3
E SERIES POWER MOSFET POWERPAK 1
Manufacturer # :SIHK055N60E-T1-GE3
Manufacturer :Vishay
Dasenic # :SIHK055N60E-T1-GE3-DS
Datasheet :
SIHK055N60E-T1-GE3 Datasheet
SIHK055N60E-T1-GE3 DatasheetCustomer # :
Description : E SERIES POWER MOSFET POWERPAK 1
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 7.3080 | $ 7.31 |
| 10+ | $ 6.2640 | $ 62.64 |
| 25+ | $ 5.6790 | $ 141.98 |
| 100+ | $ 5.2200 | $ 522 |
| 250+ | $ 4.9140 | $ 1228.5 |
In Stock: 6930
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 7.308
Total :$ 7.31
Delivery :
Payment :
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SIHK055N60E-T1-GE3 information
Vishay SIHK055N60E-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerBSFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK®10 x 12
- Power Dissipation ( Max):236W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:42A (Tc)
- Rds On ( Max) @ Id, Vgs:56mOhm @ 16A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:81 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:3504 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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