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Vishay SIHH21N65EF-T1-GE3

Name: SIHH21N65EF-T1-GE3
Brand: Vishay
SKU: SIHH21N65EF-T1-GE3-DS
Price: 14.6800 USD
Availability: InStock
Rating: 4.8 (42 reviews)

In Stock: 2712

MOQ: 1

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Mfr.Part # :SIHH21N65EF-T1-GE3
Manufacturer :Vishay
Dasenic # :SIHH21N65EF-T1-GE3-DS
Datasheet : SIHH21N65EF-T1-GE3 Datasheet PDF
Description : MOSFET N-CH 650V 19.8A PPAK 8X8
Package :-
Unit Price: $14.6800
Total: $14.68

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Vishay SIHH21N65EF-T1-GE3 technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single

Product Status:Active

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Package / Case:8-PowerTDFN

Technology:MOSFET (Metal Oxide)

Supplier Device Package:PowerPAK® 8 x 8

Power Dissipation ( Max):156W (Tc)

F E T Type:N-Channel

F E T Feature:-

Drain to Source Voltage ( Vdss):650 V

Current - Continuous Drain ( Id) @ 25° C:19.8A (Tc)

Rds On ( Max) @ Id, Vgs:180mOhm @ 11A, 10V

Vgs(th) ( Max) @ Id:4V @ 250µA

Gate Charge ( Qg) ( Max) @ Vgs:102 nC @ 10 V

Input Capacitance ( Ciss) ( Max) @ Vds:2396 pF @ 100 V

Drive Voltage ( Max Rds On, Min Rds On):10V

Vgs ( Max):±30V

EU RoHS Status:RoHS Compliant

REACH Status:REACH is not affected

US ECCN:EAR99

China RoHS Status:Green Symbol: Green and environmentally friendly product

SIHH21N65EF-T1-GE3 provided by Vishay

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.