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Vishay SIHH186N60EF-T1GE3
MOSFET N-CH 600V 16A PPAK 8 X 8
Manufacturer # :SIHH186N60EF-T1GE3
Manufacturer :Vishay
Dasenic # :SIHH186N60EF-T1GE3-DS
Datasheet :
SIHH186N60EF-T1GE3 Datasheet
SIHH186N60EF-T1GE3 DatasheetCustomer # :
Description : MOSFET N-CH 600V 16A PPAK 8 X 8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.3470 | $ 4.35 |
| 10+ | $ 3.6540 | $ 36.54 |
| 25+ | $ 3.4740 | $ 86.85 |
| 100+ | $ 2.9610 | $ 296.1 |
| 250+ | $ 2.7990 | $ 699.75 |
In Stock: 8529
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.347
Total :$ 4.35
Delivery :
Payment :
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SIHH186N60EF-T1GE3 information
Vishay SIHH186N60EF-T1GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® 8 x 8
- Power Dissipation ( Max):114W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:16A (Tc)
- Rds On ( Max) @ Id, Vgs:193mOhm @ 9.5A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:32 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1081 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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