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Vishay SIHG32N50D-GE3
MOSFET N-CH 500V 30A TO247AC
Manufacturer # :SIHG32N50D-GE3
Manufacturer :Vishay
Dasenic # :SIHG32N50D-GE3-DS
Datasheet :
SIHG32N50D-GE3 Datasheet
SIHG32N50D-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 500V 30A TO247AC
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.5630 | $ 4.56 |
| 10+ | $ 3.8340 | $ 38.34 |
| 25+ | $ 3.6180 | $ 90.45 |
| 100+ | $ 3.1050 | $ 310.5 |
| 250+ | $ 2.9250 | $ 731.25 |
In Stock: 4698
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.563
Total :$ 4.56
Delivery :
Payment :
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SIHG32N50D-GE3 information
Vishay SIHG32N50D-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-247AC
- Power Dissipation ( Max):390W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):500 V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:150mOhm @ 16A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:96 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2550 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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