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Vishay SIHG30N60E-E3
MOSFET N-CH 600V 29A TO247AC
Manufacturer # :SIHG30N60E-E3
Manufacturer :Vishay
Dasenic # :SIHG30N60E-E3-DS
Datasheet :
SIHG30N60E-E3 Datasheet
SIHG30N60E-E3 DatasheetCustomer # :
Description : MOSFET N-CH 600V 29A TO247AC
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 9.4668 | $ 94.67 |
| 500+ | $ 7.8890 | $ 3944.5 |
| 1000+ | $ 7.6360 | $ 7636 |
| 2000+ | $ 7.3830 | $ 14766 |
| 3000+ | $ 7.0840 | $ 21252 |
In Stock: 2773
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 9.4668
Total :$ 9.47
Delivery :
Payment :
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SIHG30N60E-E3 information
Vishay SIHG30N60E-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-247AC
- Power Dissipation ( Max):250W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:29A (Tc)
- Rds On ( Max) @ Id, Vgs:125mOhm @ 15A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:130 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2600 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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