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Vishay SIHG100N60E-GE3
Manufacturer # :SIHG100N60E-GE3
Manufacturer :Vishay
Dasenic # :SIHG100N60E-GE3-DS
Datasheet : SIHG100N60E-GE3 Datasheet
Customer # :
Description : MOSFET N-CH 600V 30A TO247AC
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In Stock: 3924
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.9916
Total :$ 2.99
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Vishay SIHG100N60E-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-247AC
- Power Dissipation ( Max):208W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:30A (Tc)
- Rds On ( Max) @ Id, Vgs:100mOhm @ 13A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:50 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1851 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
SIHG100N60E-GE3 provided by Vishay
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader.
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