Images are for reference only.
1 : $8.7030
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Vishay SIHG026N60EF-GE3
EF SERIES POWER MOSFET WITH FAST
Manufacturer # :SIHG026N60EF-GE3
Manufacturer :Vishay
Dasenic # :SIHG026N60EF-GE3-DS
Datasheet :
SIHG026N60EF-GE3 Datasheet
SIHG026N60EF-GE3 DatasheetCustomer # :
Description : EF SERIES POWER MOSFET WITH FAST
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 8.7030 | $ 8.7 |
| 10+ | $ 7.6635 | $ 76.64 |
| 100+ | $ 7.2934 | $ 729.34 |
In Stock: 2000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 8.703
Total :$ 8.70
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
SIHG026N60EF-GE3 information
Vishay SIHG026N60EF-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-247AC
- Power Dissipation ( Max):521W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:95A (Tc)
- Rds On ( Max) @ Id, Vgs:26mOhm @ 38A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:227 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:7926 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
Related Products Recommended
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
