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Vishay SIHFR320-GE3
MOSFET N-CH 400V 3.1A DPAK
Manufacturer # :SIHFR320-GE3
Manufacturer :Vishay
Dasenic # :SIHFR320-GE3-DS
Datasheet :
SIHFR320-GE3 Datasheet
SIHFR320-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 400V 3.1A DPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.5310 | $ 0.53 |
| 10+ | $ 0.4635 | $ 4.64 |
| 100+ | $ 0.3213 | $ 32.13 |
| 500+ | $ 0.2682 | $ 134.1 |
| 1000+ | $ 0.2511 | $ 251.1 |
In Stock: 6642
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.531
Total :$ 0.53
Delivery :
Payment :
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SIHFR320-GE3 information
Vishay SIHFR320-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):2.5W (Ta), 42W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):400 V
- Current - Continuous Drain ( Id) @ 25° C:3.1A (Tc)
- Rds On ( Max) @ Id, Vgs:1.8Ohm @ 1.9A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:20 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:350 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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