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Vishay SIHFL9110TR-GE3
MOSFET P-CH 100V 1.1A SOT223
Manufacturer # :SIHFL9110TR-GE3
Manufacturer :Vishay
Dasenic # :SIHFL9110TR-GE3-DS
Datasheet :
SIHFL9110TR-GE3 Datasheet
SIHFL9110TR-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 100V 1.1A SOT223
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.2918 | $ 2.92 |
| 2500+ | $ 0.1621 | $ 405.25 |
In Stock: 11437
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2918
Total :$ 0.29
Delivery :
Payment :
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SIHFL9110TR-GE3 information
Vishay SIHFL9110TR-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-261-4, TO-261AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-223
- Power Dissipation ( Max):2W (Ta), 3.1W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:1.1A (Tc)
- Rds On ( Max) @ Id, Vgs:1.2Ohm @ 660mA, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:8.7 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:200 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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