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Vishay Intertechnology SIHF12N65E-GE3
MOSFET N-CH 650V 12A TO220
Manufacturer # :SIHF12N65E-GE3
Manufacturer :Vishay Intertechnology
Dasenic # :765EA0-DS
Datasheet :
SIHF12N65E-GE3 Datasheet
SIHF12N65E-GE3 DatasheetSample :
Customer # :
Description : MOSFET N-CH 650V 12A TO220 TO-220-3 Full Pack Tube
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.214000 | $ 2.21 |
| 10+ | $ 1.539000 | $ 15.39 |
| 100+ | $ 1.296000 | $ 129.6 |
| 250+ | $ 1.260000 | $ 315 |
| 500+ | $ 1.143000 | $ 571.5 |
In Stock: 5970
MOQ :1 PCS
Packaging :TO-220-3 Full Pack Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.214
Total :$ 2.21
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220 Full Pack
- Power Dissipation ( Max):33W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Tc)
- Rds On ( Max) @ Id, Vgs:380mOhm @ 6A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:70 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1224 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Base Product Number:SIHF12
- Packaging:Tube
