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Vishay SIHD6N65ET1-GE3
MOSFET N-CH 650V 7A TO252AA
Manufacturer # :SIHD6N65ET1-GE3
Manufacturer :Vishay
Dasenic # :SIHD6N65ET1-GE3-DS
Datasheet :
SIHD6N65ET1-GE3 Datasheet
SIHD6N65ET1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 650V 7A TO252AA
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.6754 | $ 26.75 |
| 2000+ | $ 1.7836 | $ 3567.2 |
| 4000+ | $ 1.7264 | $ 6905.6 |
| 8000+ | $ 1.6692 | $ 13353.6 |
| 12000+ | $ 1.6016 | $ 19219.2 |
In Stock: 2382
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.6754
Total :$ 2.68
Delivery :
Payment :
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SIHD6N65ET1-GE3 information
Vishay SIHD6N65ET1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252AA
- Power Dissipation ( Max):78W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:7A (Tc)
- Rds On ( Max) @ Id, Vgs:600mOhm @ 3A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:48 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:820 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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