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1 : $5.3730
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Vishay SIHB28N60EF-T1-GE3
N-CHANNEL 600V
Manufacturer # :SIHB28N60EF-T1-GE3
Manufacturer :Vishay
Dasenic # :SIHB28N60EF-T1-GE3-DS
Datasheet :
SIHB28N60EF-T1-GE3 Datasheet
SIHB28N60EF-T1-GE3 DatasheetCustomer # :
Description : N-CHANNEL 600V
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 5.3730 | $ 5.37 |
| 10+ | $ 4.5099 | $ 45.1 |
| 100+ | $ 3.6487 | $ 364.87 |
In Stock: 4722
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.373
Total :$ 5.37
Delivery :
Payment :
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SIHB28N60EF-T1-GE3 information
Vishay SIHB28N60EF-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK (TO-263)
- Power Dissipation ( Max):250W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:28A (Tc)
- Rds On ( Max) @ Id, Vgs:123mOhm @ 14A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:120 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2714 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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