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Vishay SIHB24N65E-E3
MOSFET N-CH 650V 24A D2PAK
Manufacturer # :SIHB24N65E-E3
Manufacturer :Vishay
Dasenic # :SIHB24N65E-E3-DS
Datasheet :
SIHB24N65E-E3 Datasheet
SIHB24N65E-E3 DatasheetCustomer # :
Description : MOSFET N-CH 650V 24A D2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 8.8419 | $ 88.42 |
| 1000+ | $ 5.8946 | $ 5894.6 |
In Stock: 1753
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 8.8419
Total :$ 8.84
Delivery :
Payment :
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SIHB24N65E-E3 information
Vishay SIHB24N65E-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK (TO-263)
- Power Dissipation ( Max):250W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:24A (Tc)
- Rds On ( Max) @ Id, Vgs:145mOhm @ 12A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:122 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2740 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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