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Vishay SIHA12N60E-GE3
N-CHANNEL 600V
Manufacturer # :SIHA12N60E-GE3
Manufacturer :Vishay
Dasenic # :SIHA12N60E-GE3-DS
Datasheet :
SIHA12N60E-GE3 Datasheet
SIHA12N60E-GE3 DatasheetCustomer # :
Description : N-CHANNEL 600V
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.5576 | $ 15.58 |
| 1000+ | $ 1.0384 | $ 1038.4 |
| 2000+ | $ 0.9865 | $ 1973 |
| 5000+ | $ 0.9494 | $ 4747 |
In Stock: 6000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.5576
Total :$ 1.56
Delivery :
Payment :
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SIHA12N60E-GE3 information
Vishay SIHA12N60E-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220 Full Pack
- Power Dissipation ( Max):33W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Tc)
- Rds On ( Max) @ Id, Vgs:380mOhm @ 6A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:58 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:937 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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