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Vishay SIHA125N60EF-GE3
MOSFET N-CH 600V 11A TO220
Manufacturer # :SIHA125N60EF-GE3
Manufacturer :Vishay
Dasenic # :SIHA125N60EF-GE3-DS
Datasheet :
SIHA125N60EF-GE3 Datasheet
SIHA125N60EF-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 600V 11A TO220
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 3.8160 | $ 3.82 |
| 50+ | $ 3.0236 | $ 151.18 |
| 100+ | $ 2.5917 | $ 259.17 |
| 500+ | $ 2.3038 | $ 1151.9 |
| 1000+ | $ 1.9726 | $ 1972.6 |
In Stock: 5445
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.816
Total :$ 3.82
Delivery :
Payment :
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SIHA125N60EF-GE3 information
Vishay SIHA125N60EF-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220 Full Pack
- Power Dissipation ( Max):179W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:11A (Tc)
- Rds On ( Max) @ Id, Vgs:125mOhm @ 12A, 10V
- Vgs(th) ( Max) @ Id:5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:47 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1533 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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