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Vishay SIE844DF-T1-GE3
MOSFET N-CH 30V 44.5A 10POLARPAK
Manufacturer # :SIE844DF-T1-GE3
Manufacturer :Vishay
Dasenic # :SIE844DF-T1-GE3-DS
Datasheet :
SIE844DF-T1-GE3 Datasheet
SIE844DF-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 44.5A 10POLARPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 2.9822 | $ 29.82 |
| 3000+ | $ 1.9881 | $ 5964.3 |
| 6000+ | $ 1.9133 | $ 11479.8 |
| 9000+ | $ 1.8386 | $ 16547.4 |
In Stock: 52
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.9822
Total :$ 2.98
Delivery :
Payment :
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SIE844DF-T1-GE3 information
Vishay SIE844DF-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-PolarPAK® (U)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:10-PolarPAK® (U)
- Power Dissipation ( Max):5.2W (Ta), 25W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:44.5A (Tc)
- Rds On ( Max) @ Id, Vgs:7mOhm @ 12.1A, 10V
- Vgs(th) ( Max) @ Id:3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:44 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2150 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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