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Vishay SIE820DF-T1-E3
MOSFET N-CH 20V 50A 10POLARPAK
Manufacturer # :SIE820DF-T1-E3
Manufacturer :Vishay
Dasenic # :SIE820DF-T1-E3-DS
Datasheet :
SIE820DF-T1-E3 Datasheet
SIE820DF-T1-E3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 50A 10POLARPAK
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| Quantity | Unit Price | Total |
In Stock: 24
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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SIE820DF-T1-E3 information
Vishay SIE820DF-T1-E3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-PolarPAK® (S)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:10-PolarPAK® (S)
- Power Dissipation ( Max):5.2W (Ta), 104W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:50A (Tc)
- Rds On ( Max) @ Id, Vgs:3.5mOhm @ 18A, 4.5V
- Vgs(th) ( Max) @ Id:2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:143 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:4300 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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