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Vishay SIDR402DP-T1-RE3
N-CHANNEL 40-V (D-S) MOSFET
Manufacturer # :SIDR402DP-T1-RE3
Manufacturer :Vishay
Dasenic # :SIDR402DP-T1-RE3-DS
Datasheet :
SIDR402DP-T1-RE3 Datasheet
SIDR402DP-T1-RE3 DatasheetCustomer # :
Description : N-CHANNEL 40-V (D-S) MOSFET
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.6724 | $ 16.72 |
| 3000+ | $ 0.9291 | $ 2787.3 |
| 6000+ | $ 0.8942 | $ 5365.2 |
| 9000+ | $ 0.8646 | $ 7781.4 |
In Stock: 10800
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.6724
Total :$ 1.67
Delivery :
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SIDR402DP-T1-RE3 information
Vishay SIDR402DP-T1-RE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8DC
- Power Dissipation ( Max):6.25W (Ta), 125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):40 V
- Current - Continuous Drain ( Id) @ 25° C:64.6A (Ta), 100A (Tc)
- Rds On ( Max) @ Id, Vgs:0.88mhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:165 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:9100 pF @ 20 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+20V, -16V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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