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Vishay SIDR390DP-T1-GE3
MOSFET N-CH 30V 69.9A/100A PPAK
Manufacturer # :SIDR390DP-T1-GE3
Manufacturer :Vishay
Dasenic # :SIDR390DP-T1-GE3-DS
Datasheet :
SIDR390DP-T1-GE3 Datasheet
SIDR390DP-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 30V 69.9A/100A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.7482 | $ 17.48 |
| 3000+ | $ 0.9712 | $ 2913.6 |
| 6000+ | $ 0.9347 | $ 5608.2 |
| 9000+ | $ 0.9037 | $ 8133.3 |
In Stock: 7200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.7482
Total :$ 1.75
Delivery :
Payment :
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SIDR390DP-T1-GE3 information
Vishay SIDR390DP-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SO-8
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SO-8DC
- Power Dissipation ( Max):6.25W (Ta), 125W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:69.9A (Ta), 100A (Tc)
- Rds On ( Max) @ Id, Vgs:0.8mOhm @ 20A, 10V
- Vgs(th) ( Max) @ Id:2V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:153 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:10180 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):+20V, -16V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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