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Vishay SIB414DK-T1-GE3

MOSFET N-CH 8V 9A PPAK SC75-6
part number has RoHS
Manufacturer # :SIB414DK-T1-GE3
Manufacturer :Vishay
Dasenic # :SIB414DK-T1-GE3-DS
Customer # :
Description : MOSFET N-CH 8V 9A PPAK SC75-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
10+$ 0.9932$ 9.93
3000+$ 0.6621$ 1986.3
6000+$ 0.6272$ 3763.2
9000+$ 0.5808$ 5227.2
30000+$ 0.5715$ 17145
In Stock: 29
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9932
Total :$ 0.99
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SIB414DK-T1-GE3 information

  • Vishay SIB414DK-T1-GE3 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Obsolete
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SC-75-6
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:PowerPAK® SC-75-6
  • Power Dissipation ( Max):2.4W (Ta), 13W (Tc)
  • F E T Type:N-Channel
  • F E T Feature:-
  • Drain to Source Voltage ( Vdss):8 V
  • Current - Continuous Drain ( Id) @ 25° C:9A (Tc)
  • Rds On ( Max) @ Id, Vgs:26mOhm @ 7.9A, 4.5V
  • Vgs(th) ( Max) @ Id:1V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:14.03 nC @ 5 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:732 pF @ 4 V
  • Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
  • Vgs ( Max):±5V
  • EU RoHS Status:ROHS3 Compliant
  • MSL Rating:1 (Unlimited, 30°C/85%RH)
  • REACH Status:REACH Unaffected
  • US ECCN:EAR99
  • HTS US:8541.29.0095
  • China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

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