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Vishay SIB411DK-T1-GE3
MOSFET P-CH 20V 9A PPAK SC75-6
Manufacturer # :SIB411DK-T1-GE3
Manufacturer :Vishay
Dasenic # :SIB411DK-T1-GE3-DS
Datasheet :
SIB411DK-T1-GE3 Datasheet
SIB411DK-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 20V 9A PPAK SC75-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.9068 | $ 9.07 |
| 3000+ | $ 0.6045 | $ 1813.5 |
| 6000+ | $ 0.5727 | $ 3436.2 |
| 9000+ | $ 0.5302 | $ 4771.8 |
| 30000+ | $ 0.5218 | $ 15654 |
In Stock: 70
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9068
Total :$ 0.91
Delivery :
Payment :
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SIB411DK-T1-GE3 information
Vishay SIB411DK-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-75-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-75-6
- Power Dissipation ( Max):2.4W (Ta), 13W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:9A (Tc)
- Rds On ( Max) @ Id, Vgs:66mOhm @ 3.3A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:15 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:470 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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