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Vishay SIA817EDJ-T1-GE3
MOSFET P-CH 30V 4.5A PPAK SC70-6
Manufacturer # :SIA817EDJ-T1-GE3
Manufacturer :Vishay
Dasenic # :SIA817EDJ-T1-GE3-DS
Datasheet :
SIA817EDJ-T1-GE3 Datasheet
SIA817EDJ-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 30V 4.5A PPAK SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3510 | $ 0.35 |
| 10+ | $ 0.3033 | $ 3.03 |
| 100+ | $ 0.2367 | $ 23.67 |
| 500+ | $ 0.1989 | $ 99.45 |
| 1000+ | $ 0.1656 | $ 165.6 |
In Stock: 47186
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.351
Total :$ 0.35
Delivery :
Payment :
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SIA817EDJ-T1-GE3 information
Vishay SIA817EDJ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6 Dual
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6 Dual
- Power Dissipation ( Max):1.9W (Ta), 6.5W (Tc)
- F E T Type:P-Channel
- F E T Feature:Schottky Diode (Isolated)
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:4.5A (Tc)
- Rds On ( Max) @ Id, Vgs:65mOhm @ 3A, 10V
- Vgs(th) ( Max) @ Id:1.3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:23 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:600 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 10V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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