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Vishay SIA813DJ-T1-GE3

MOSFET P-CH 20V 4.5A PPAK SC70-6
part number has RoHS
Manufacturer # :SIA813DJ-T1-GE3
Manufacturer :Vishay
Dasenic # :SIA813DJ-T1-GE3-DS
Customer # :
Description : MOSFET P-CH 20V 4.5A PPAK SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
10+$ 1.2965$ 12.97
3000+$ 0.7203$ 2160.9
6000+$ 0.6972$ 4183.2
12000+$ 0.6741$ 8089.2
18000+$ 0.6468$ 11642.4
In Stock: 584
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.2965
Total :$ 1.30
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SIA813DJ-T1-GE3 information

  • Vishay SIA813DJ-T1-GE3 technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
  • Product Status:Active
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SC-70-6 Dual
  • Technology:MOSFET (Metal Oxide)
  • Supplier Device Package:PowerPAK® SC-70-6 Dual
  • Power Dissipation ( Max):1.9W (Ta), 6.5W (Tc)
  • F E T Type:P-Channel
  • F E T Feature:Schottky Diode (Isolated)
  • Drain to Source Voltage ( Vdss):20 V
  • Current - Continuous Drain ( Id) @ 25° C:4.5A (Tc)
  • Rds On ( Max) @ Id, Vgs:94mOhm @ 2.8A, 4.5V
  • Vgs(th) ( Max) @ Id:1V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 8 V
  • Input Capacitance ( Ciss) ( Max) @ Vds:355 pF @ 10 V
  • Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
  • Vgs ( Max):±8V
  • EU RoHS Status:RoHS Compliant
  • REACH Status:REACH is not affected
  • US ECCN:EAR99
  • China RoHS Status:Green Symbol: Green and environmentally friendly product

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