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Vishay SIA810DJ-T1-GE3
MOSFET N-CH 20V 4.5A PPAK SC70-6
Manufacturer # :SIA810DJ-T1-GE3
Manufacturer :Vishay
Dasenic # :SIA810DJ-T1-GE3-DS
Datasheet :
SIA810DJ-T1-GE3 Datasheet
SIA810DJ-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 4.5A PPAK SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.6670 | $ 16.67 |
| 3000+ | $ 0.9261 | $ 2778.3 |
| 6000+ | $ 0.8964 | $ 5378.4 |
| 12000+ | $ 0.8667 | $ 10400.4 |
| 18000+ | $ 0.8316 | $ 14968.8 |
In Stock: 2601
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.667
Total :$ 1.67
Delivery :
Payment :
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SIA810DJ-T1-GE3 information
Vishay SIA810DJ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6 Dual
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6 Dual
- Power Dissipation ( Max):1.9W (Ta), 6.5W (Tc)
- F E T Type:N-Channel
- F E T Feature:Schottky Diode (Isolated)
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:4.5A (Tc)
- Rds On ( Max) @ Id, Vgs:53mOhm @ 3.7A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:11.5 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:400 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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