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Vishay SIA485DJ-T1-GE3
MOSFET P-CH 150V 1.6A PPAK SC70
Manufacturer # :SIA485DJ-T1-GE3
Manufacturer :Vishay
Dasenic # :SIA485DJ-T1-GE3-DS
Datasheet :
SIA485DJ-T1-GE3 Datasheet
SIA485DJ-T1-GE3 DatasheetCustomer # :
Description : MOSFET P-CH 150V 1.6A PPAK SC70
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.2412 | $ 2.41 |
| 3000+ | $ 0.1340 | $ 402 |
| 6000+ | $ 0.1317 | $ 790.2 |
| 12000+ | $ 0.1294 | $ 1552.8 |
| 18000+ | $ 0.1272 | $ 2289.6 |
In Stock: 30342
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2412
Total :$ 0.24
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SIA485DJ-T1-GE3 information
Vishay SIA485DJ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6
- Power Dissipation ( Max):15.6W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):150 V
- Current - Continuous Drain ( Id) @ 25° C:1.6A (Tc)
- Rds On ( Max) @ Id, Vgs:2.6Ohm @ 500mA, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:6.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:155 pF @ 75 V
- Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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