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Vishay SIA453EDJ-T1-GE3
Manufacturer # :SIA453EDJ-T1-GE3
Manufacturer :Vishay
Dasenic # :SIA453EDJ-T1-GE3-DS
Datasheet : SIA453EDJ-T1-GE3 Datasheet
Customer # :
Description : MOSFET P-CH 30V 24A PPAK SC70-6
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In Stock: 1726
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.32
Total :$ 1.32
Delivery :
Payment :
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SIA453EDJ-T1-GE3 information
Vishay SIA453EDJ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-50°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6
- Power Dissipation ( Max):3.5W (Ta), 19W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:24A (Tc)
- Rds On ( Max) @ Id, Vgs:18.5mOhm @ 5A, 10V
- Vgs(th) ( Max) @ Id:1.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:66 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1900 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 10V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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