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Vishay SIA450DJ-T1-GE3
MOSFET N-CH 240V 1.52A PPAK
Manufacturer # :SIA450DJ-T1-GE3
Manufacturer :Vishay
Dasenic # :SIA450DJ-T1-GE3-DS
Datasheet :
SIA450DJ-T1-GE3 Datasheet
SIA450DJ-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 240V 1.52A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.1168 | $ 11.17 |
| 3000+ | $ 0.7445 | $ 2233.5 |
| 6000+ | $ 0.7090 | $ 4254 |
| 9000+ | $ 0.6763 | $ 6086.7 |
| 30000+ | $ 0.6545 | $ 19635 |
In Stock: 88
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1168
Total :$ 1.12
Delivery :
Payment :
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SIA450DJ-T1-GE3 information
Vishay SIA450DJ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6
- Power Dissipation ( Max):3.3W (Ta), 15W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):240 V
- Current - Continuous Drain ( Id) @ 25° C:1.52A (Tc)
- Rds On ( Max) @ Id, Vgs:2.9Ohm @ 700mA, 10V
- Vgs(th) ( Max) @ Id:2.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:7.04 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:167 pF @ 120 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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