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Vishay SIA436DJ-T4-GE3
MOSFET N-CH 8V 12A PPAK SC70-6
Manufacturer # :SIA436DJ-T4-GE3
Manufacturer :Vishay
Dasenic # :SIA436DJ-T4-GE3-DS
Datasheet :
SIA436DJ-T4-GE3 Datasheet
SIA436DJ-T4-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 8V 12A PPAK SC70-6
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.5400 | $ 0.54 |
| 10+ | $ 0.4851 | $ 4.85 |
| 100+ | $ 0.3312 | $ 33.12 |
| 500+ | $ 0.2763 | $ 138.15 |
| 1000+ | $ 0.2349 | $ 234.9 |
In Stock: 9000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.54
Total :$ 0.54
Delivery :
Payment :
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SIA436DJ-T4-GE3 information
Vishay SIA436DJ-T4-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6
- Power Dissipation ( Max):3.5W (Ta), 19W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Tc)
- Rds On ( Max) @ Id, Vgs:9.4mOhm @ 15.7A, 4.5V
- Vgs(th) ( Max) @ Id:800mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:25.2 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1508 pF @ 4 V
- Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
- Vgs ( Max):±5V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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