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Vishay SIA106DJ-T1-GE3
MOSFET N-CH 60V 10A/12A PPAK
Manufacturer # :SIA106DJ-T1-GE3
Manufacturer :Vishay
Dasenic # :SIA106DJ-T1-GE3-DS
Datasheet :
SIA106DJ-T1-GE3 Datasheet
SIA106DJ-T1-GE3 DatasheetCustomer # :
Description : MOSFET N-CH 60V 10A/12A PPAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.7560 | $ 0.76 |
| 10+ | $ 0.6579 | $ 6.58 |
| 100+ | $ 0.4563 | $ 45.63 |
| 500+ | $ 0.3816 | $ 190.8 |
| 1000+ | $ 0.3240 | $ 324 |
In Stock: 17411
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.756
Total :$ 0.76
Delivery :
Payment :
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SIA106DJ-T1-GE3 information
Vishay SIA106DJ-T1-GE3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® SC-70-6
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PowerPAK® SC-70-6
- Power Dissipation ( Max):3.5W (Ta), 19W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:10A (Ta), 12A (Tc)
- Rds On ( Max) @ Id, Vgs:18.5mOhm @ 4A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:13.5 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:540 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):7.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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