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Vishay SI8821EDB-T2-E1
Manufacturer # :SI8821EDB-T2-E1
Manufacturer :Vishay
Dasenic # :SI8821EDB-T2-E1-DS
Datasheet : SI8821EDB-T2-E1 Datasheet
Customer # :
Description : MOSFET P-CH 30V 4MICROFOOT
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In Stock: 17836
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1717
Total :$ 0.17
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SI8821EDB-T2-E1 information
Vishay SI8821EDB-T2-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-XFBGA, CSPBGA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-Microfoot
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:1.6A (Ta)
- Rds On ( Max) @ Id, Vgs:135mOhm @ 1A, 4.5V
- Vgs(th) ( Max) @ Id:1.3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:440 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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