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1 : $0.3780
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Vishay SI8812DB-T2-E1
MOSFET N-CH 20V 4MICROFOOT
Manufacturer # :SI8812DB-T2-E1
Manufacturer :Vishay
Dasenic # :SI8812DB-T2-E1-DS
Datasheet :
SI8812DB-T2-E1 Datasheet
SI8812DB-T2-E1 DatasheetCustomer # :
Description : MOSFET N-CH 20V 4MICROFOOT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3780 | $ 0.38 |
| 10+ | $ 0.3213 | $ 3.21 |
| 100+ | $ 0.2241 | $ 22.41 |
| 500+ | $ 0.1746 | $ 87.3 |
| 1000+ | $ 0.1422 | $ 142.2 |
In Stock: 29728
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.378
Total :$ 0.38
Delivery :
Payment :
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SI8812DB-T2-E1 information
Vishay SI8812DB-T2-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-UFBGA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-Microfoot
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:2.3A (Ta)
- Rds On ( Max) @ Id, Vgs:59mOhm @ 1A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 8 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
- Vgs ( Max):±5V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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