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Vishay SI8805EDB-T2-E1
MOSFET P-CH 8V 4MICROFOOT
Manufacturer # :SI8805EDB-T2-E1
Manufacturer :Vishay
Dasenic # :SI8805EDB-T2-E1-DS
Datasheet :
SI8805EDB-T2-E1 Datasheet
SI8805EDB-T2-E1 DatasheetCustomer # :
Description : MOSFET P-CH 8V 4MICROFOOT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.8604 | $ 8.6 |
| 3000+ | $ 0.4780 | $ 1434 |
| 30000+ | $ 0.4540 | $ 13620 |
| 150000+ | $ 0.4300 | $ 64500 |
| 300000+ | $ 0.4060 | $ 121800 |
In Stock: 2487
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.8604
Total :$ 0.86
Delivery :
Payment :
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SI8805EDB-T2-E1 information
Vishay SI8805EDB-T2-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-XFBGA, CSPBGA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-Microfoot
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:2.2A (Ta)
- Rds On ( Max) @ Id, Vgs:68mOhm @ 1.5A, 4.5V
- Vgs(th) ( Max) @ Id:700mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
- Vgs ( Max):±5V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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