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1 : $0.7290
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Vishay SI8445DB-T2-E1
MOSFET P-CH 20V 9.8A 4MICROFOOT
Manufacturer # :SI8445DB-T2-E1
Manufacturer :Vishay
Dasenic # :SI8445DB-T2-E1-DS
Datasheet :
SI8445DB-T2-E1 Datasheet
SI8445DB-T2-E1 DatasheetCustomer # :
Description : MOSFET P-CH 20V 9.8A 4MICROFOOT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.7290 | $ 0.73 |
| 7+ | $ 0.6075 | $ 4.25 |
| 23+ | $ 0.4374 | $ 10.06 |
| 104+ | $ 0.3402 | $ 35.38 |
| 530+ | $ 0.3038 | $ 161.01 |
In Stock: 10467
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.729
Total :$ 0.73
Delivery :
Payment :
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SI8445DB-T2-E1 information
Vishay SI8445DB-T2-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-XFBGA, CSPBGA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-Microfoot
- Power Dissipation ( Max):1.8W (Ta), 11.4W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:9.8A (Tc)
- Rds On ( Max) @ Id, Vgs:84mOhm @ 1A, 4.5V
- Vgs(th) ( Max) @ Id:850mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:16 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:700 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
- Vgs ( Max):±5V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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