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Vishay SI8441DB-T2-E1
MOSFET P-CH 20V 10.5A 6MICROFOOT
Manufacturer # :SI8441DB-T2-E1
Manufacturer :Vishay
Dasenic # :SI8441DB-T2-E1-DS
Datasheet :
SI8441DB-T2-E1 Datasheet
SI8441DB-T2-E1 DatasheetCustomer # :
Description : MOSFET P-CH 20V 10.5A 6MICROFOOT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.8756 | $ 18.76 |
| 3000+ | $ 1.0420 | $ 3126 |
| 9000+ | $ 1.0000 | $ 9000 |
In Stock: 2598
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.8756
Total :$ 1.88
Delivery :
Payment :
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SI8441DB-T2-E1 information
Vishay SI8441DB-T2-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-UFBGA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:6-Micro Foot™ (1.5x1)
- Power Dissipation ( Max):2.77W (Ta), 13W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:10.5A (Tc)
- Rds On ( Max) @ Id, Vgs:80mOhm @ 1A, 4.5V
- Vgs(th) ( Max) @ Id:700mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:600 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
- Vgs ( Max):±5V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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