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1 : $0.5580
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Vishay SI8425DB-T1-E1
MOSFET P-CH 20V 4WLCSP
Manufacturer # :SI8425DB-T1-E1
Manufacturer :Vishay
Dasenic # :SI8425DB-T1-E1-DS
Datasheet :
SI8425DB-T1-E1 Datasheet
SI8425DB-T1-E1 DatasheetCustomer # :
Description : MOSFET P-CH 20V 4WLCSP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.5580 | $ 0.56 |
| 10+ | $ 0.4419 | $ 4.42 |
| 100+ | $ 0.3033 | $ 30.33 |
| 500+ | $ 0.2394 | $ 119.7 |
| 1000+ | $ 0.2187 | $ 218.7 |
In Stock: 29054
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.558
Total :$ 0.56
Delivery :
Payment :
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SI8425DB-T1-E1 information
Vishay SI8425DB-T1-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-UFBGA, WLCSP
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-WLCSP (1.6x1.6)
- Power Dissipation ( Max):1.1W (Ta), 2.7W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:5.9A (Ta)
- Rds On ( Max) @ Id, Vgs:23mOhm @ 2A, 4.5V
- Vgs(th) ( Max) @ Id:900mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:110 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2800 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4.5V
- Vgs ( Max):±10V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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