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Vishay SI8424CDB-T1-E1
MOSFET N-CH 8V 4MICROFOOT
Manufacturer # :SI8424CDB-T1-E1
Manufacturer :Vishay
Dasenic # :SI8424CDB-T1-E1-DS
Datasheet :
SI8424CDB-T1-E1 Datasheet
SI8424CDB-T1-E1 DatasheetCustomer # :
Description : MOSFET N-CH 8V 4MICROFOOT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 34+ | $ 0.1584 | $ 5.39 |
| 100+ | $ 0.1466 | $ 14.66 |
| 250+ | $ 0.1452 | $ 36.3 |
| 500+ | $ 0.1372 | $ 68.6 |
| 1000+ | $ 0.1250 | $ 125 |
In Stock: 23855
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1584
Total :$ 0.16
Delivery :
Payment :
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SI8424CDB-T1-E1 information
Vishay SI8424CDB-T1-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-UFBGA, WLCSP
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-Microfoot
- Power Dissipation ( Max):1.1W (Ta), 2.7W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):8 V
- Current - Continuous Drain ( Id) @ 25° C:6.3A (Ta)
- Rds On ( Max) @ Id, Vgs:20mOhm @ 2A, 4.5V
- Vgs(th) ( Max) @ Id:800mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:40 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2340 pF @ 4 V
- Drive Voltage ( Max Rds On, Min Rds On):1.2V, 4.5V
- Vgs ( Max):±5V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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