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Vishay SI8413DB-T1-E1
MOSFET P-CH 20V 4.8A 4MICROFOOT
Manufacturer # :SI8413DB-T1-E1
Manufacturer :Vishay
Dasenic # :SI8413DB-T1-E1-DS
Datasheet :
SI8413DB-T1-E1 Datasheet
SI8413DB-T1-E1 DatasheetCustomer # :
Description : MOSFET P-CH 20V 4.8A 4MICROFOOT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.6600 | $ 2.66 |
| 10+ | $ 2.1820 | $ 21.82 |
| 100+ | $ 1.6968 | $ 169.68 |
| 500+ | $ 1.4382 | $ 719.1 |
| 1000+ | $ 1.1716 | $ 1171.6 |
In Stock: 1653
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.66
Total :$ 2.66
Delivery :
Payment :
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SI8413DB-T1-E1 information
Vishay SI8413DB-T1-E1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-XFBGA, CSPBGA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:4-Microfoot
- Power Dissipation ( Max):1.47W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:4.8A (Ta)
- Rds On ( Max) @ Id, Vgs:48mOhm @ 1A, 4.5V
- Vgs(th) ( Max) @ Id:1.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:21 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:-
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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